Concentration dependence of the fluorescence decay profile in transition metal doped chalcogenide glass
نویسندگان
چکیده
In this paper we present the fluorescence decay profiles of vanadium and titanium doped gallium lanthanum sulphide (GLS) glass at various doping concentrations between 0.01 and 1% (molar). We demonstrate that below a critical doping concentration the fluorescence decay profile can be fitted with the stretched exponential function: exp[-(t/τ)], where τ is the fluorescence lifetime and β is the stretch factor. At low concentrations the lifetime for vanadium and titanium doped GLS was 30 μs and 67 μs respectively. We validate the use of the stretched exponential model and discuss the possible microscopic phenomenon it arises from. We also demonstrate that above a critical doping concentration of around 0.1% (molar) the fluorescence decay profile can be fitted with the double exponential function: a*exp-(t/τ1)+ b*exp-(t/τ2), where τ1and τ2 are characteristic fast and slow components of the fluorescence decay profile, for vanadium the fast and slow components are 5 μs and 30 μs respectively and for titanium they are 15 μs and 67 μs respectively. We also show that the fluorescence lifetime of vanadium and titanium at low concentrations in the oxide rich host gallium lanthanum oxy-sulphide (GLSO) is 43 μs and 97 μs respectively, which is longer than that in GLS. From this we deduce that vanadium and titanium fluorescing ions preferentially substitute into high efficiency oxide sites until at a critical concentration they become saturated and low efficiency sulphide sites start to be filled.
منابع مشابه
Optical properties of spin-coated Er-doped Ga1As39S60 Chalcogenide thin films
Spin-coating of Chalcogenide glasses is a cost-effective and flexible method to produce thin films applicable in photonics. In this paper Er was doped into Ga1As39S60 glass by melt quenching technique and solutions for spin coating were prepared from glass powders dissolved in Propylamine and Ethylendiamine. Substrates used were microscopic slides (refractive index of about 1.51). Applied layer...
متن کاملGeS2–In2S3–CsI Chalcogenide Glasses Doped with Rare Earth Ions for Near- and Mid-IR Luminescence
Chalcogenide glass has been considered as a promising host for the potential laser gain and amplifier media operating in near- and mid-IR spectral region. In this work, the IR luminescence spectra of rare earth ions (Tm3+, Er3+, and Dy3+) doped 65GeS2-25In2S3-10CsI chalcogenide glasses were measured under the excitation of an 808 nm laser diode. To the best of our knowledge, it firstly provides...
متن کاملTailoring the Energy Band Gap of Transition Metal Doped TiO2 Thin Film
Water splitting for hydrogen production under sunlight using TiO2 as photo catalyst provides a better route for solar energy and attracts the attention of many researchers. The photo catalytic activity of TiO2 under sunlight irradiation depends on the band gap energy. The transition metal doped TiO2 shows an edge over TiO2 in optical absorbance and photo catalytic activity. Thin film of Cr dope...
متن کاملMicroscopic dynamics of the glass transition investigated by time-resolved fluorescence measurements of doped chromophores
The microscopic dynamics of several monomeric and polymeric glass-forming materials has been investigated by time-resolved fluorescence measurements of doped malachite green molecules in a wide temperature region. For monomers, 1-propanol, propylene glycol, and glycerol, and a polymer without side chains, polybutadiene, the temperature dependence of nonradiative decay time of doped malachite gr...
متن کاملSynthesis and characterization of transition metal doped ZnSe/ZnS nanocrystals by a rapid photochemical method
In the present work, a one pot, rapid and room temperature photochemical Synthesis of transition metal (TM; Cu, Mn, Cr)-doped ZnSe/ZnS core/shell nanocrystals (NCs) was reported. FT-IR spectrum confirmed the capping of ZnSe by thioglycolic acid. XRD and TEM analysis demonstrated zinc blende phase NCs with an average size of around 3 and 5 nm for TM:ZnSe and TM:ZnSe/ZnS NCs, respectively. PL spe...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2012